elektronische bauelemente SID10N30-600I 5.8a, 300v, r ds(on) 600 m ? n-channel enhancement mosfet 04-dec-2012 rev. b page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. rohs compliant product a suffix of ?-c? specifies halogen & lead-free description the miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. features ? low r ds(on) provides higher efficiency and extends battery life. ? low thermal impedance copper leadframe dpak saves board space ? fast switching speed. ? high performance trench technology. application dc-dc converters, power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. absolute maximum ratings (t a =25 c unless otherwise specified) parameter symbol rating unit drain-source voltage v ds 300 v gate-source voltage v gs 20 v continuous drain current 1 t c =25c i d 5.8 a pulsed drain current 2 i dm 20 a continuous source current (diode conduction) 1 i s 10 a power dissipation 1 t c =25c p d 40 w operating junction and st orage temperature range t j , t stg -55 ~ 175 c thermal resistance data maximum junction to ambient 1 r ja 62.5 maximum junction to case r jc 3.75 c / w notes: 1. surface mounted on 1? x 1? fr4 board. 2. pulse width limited by maximum junction temperature. a c d h g e f k b j p m to-251p millimeter millimeter ref. min. max. ref. min. max. a 6.40 6.80 g 6.00 6.30 b 5.20 5.50 h 0.90 1.50 c 2.20 2.40 j 2.30 d 0.40 0.60 k 0.60 0.90 e 6.80 7.20 m 0.70 1.20 f 4.00 p 0.40 0.60
elektronische bauelemente SID10N30-600I 5.8a, 300v, r ds(on) 600 m ? n-channel enhancement mosfet 04-dec-2012 rev. b page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a =25c unless otherwise specified) parameter symbol min typ max unit test conditions static gate-threshold voltage v gs(th) 1 - 3.5 v v ds =v gs , i d =250 a gate-body leakage i gss - - 10 na v ds =0, v gs =20v - - 1 v ds =240v, v gs =0 zero gate voltage drain current i dss - - 25 a v ds =240v, v gs =0, t j =55c on-state drain current 1 i d(on) 10 - - a v ds =5v, v gs =10v - - 600 v gs =10v, i d =2.9a drain-source on-resistance 1 r ds(on) - - 900 m ? v gs =5.5v, i d =2.6a forward transconductance 1 g fs - 10 - s v ds =15v, , i d =2.9a diode forward voltage v sd - 0.8 - v i s =5a, v gs =0 dynamic 2 total gate charge q g - 13.5 - gate-source charge q gs - 4.1 - gate-drain charge q gd - 3.4 - nc i d =2.9a v ds =120v v gs =10v turn-on delay time td (on) - 12.1 - rise time t r - 13.3 - turn-off delay time td (off) - 28.9 - fall time t f - 16.8 - ns v dd =120v v gen =10v r l =41.4 ? i d =2.9a r gen =6 ? input capacitance c iss - 1092 - output capacitance c oss - 90 - reverse transfer capacitance c rss - 52 - pf v gs =0 v ds =15v f =1mhz notes: 1 pulse test pw Q 300 us duty cycle Q 2%. 2 guaranteed by design, not s ubject to production testing.
elektronische bauelemente SID10N30-600I 5.8a, 300v, r ds(on) 600 m ? n-channel enhancement mosfet 04-dec-2012 rev. b page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curve
elektronische bauelemente SID10N30-600I 5.8a, 300v, r ds(on) 600 m ? n-channel enhancement mosfet 04-dec-2012 rev. b page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curve
|
